Low temperature nitride used as Cu barrier layer

ABSTRACT

A method of depositing a non-conductive barrier layer onto a metal surface wherein the resistance of the metal remains substantially unchanged before and after the non-conductive barrier layer deposition. The deposition process provides a low temperature processing environment so as to inhibit the formation of impurities such as silicide in the metal, wherein the silicide can adversely increase the resistance of the underlying metal.

BACKGROUND OF THE INVENTION

1. Field of the Invention

This invention relates to integrated circuit processing and, moreparticularly, to a process for depositing a non-conductive barrier layersuch as a nitride film onto a copper surface.

2. Description of the Related Art

A high density integrated circuit typically comprises numerouselectrical devices and conductors formed on multiple layers ofconducting and semiconducting material that are deposited and patternedin sequence onto a substrate surface. Additionally, insulating materialis typically positioned between the individual devices so as toelectrically isolated the devices from one another. In particular,intermediate insulating layers, better known as interlevel dielectrics(ILDs), are typically interposed between conducting layers in a circuitso as to electrically isolate components formed on adjacent layers. Theinsulating layers inhibit electrical shorts and preserve deviceintegrity.

An integrated circuit is operable when its individual components areinterconnected with an external source and with one another. Inparticular, designs of more complex circuits often involve electricalinterconnections between components on different layers of the circuitas well as between devices formed on the same layer. Such electricalinterconnections between components are typically established throughelectrical contacts formed on the individual components. The contactsprovide an exposed conductive surfaces on each device where electricalconnections can be made. However, in a multilayer, high densityintegrated circuit, the components are often buried in internalsublayers of the circuit where insulating material are deposited overthe components making the establishment of electrical contactsdifficult.

One method of creating electrical contacts on devices located in thesublayers of the circuit is by forming openings in the interleveldielectrics (ILDS) that are deposited over the components. The openings,known as contact vias or holes, typically extend downwardly from a topsurface of the ILD to the layer containing the electrical devices sothat a top surface of the device is exposed. Furthermore, the openingsare then filled with a conductive material, such as copper, whicheffectively establishes electrical contact for components locatedunderneath the ILD.

In addition to contact vias, trenches can also be etched onto thesurface of the insulating material in a desired pattern for a conductorlayer in a process that is commonly known as the damascene process. In atypical damascene process, the trenches are etched on the surface of theinsulating material comprising an ILD and subsequently metalized so asto produce integrated conductors. In particular, the trenches aremetalized in a similar manner as that of the contact vias wherein thetrenches are filled with a conductive material so as to establish adesired conductive path.

The metalization process generally involves depositing a layer ofconductive material such as copper into the vias or trenches, therebyinterconnecting electrical devices and wiring at various levels. In amultilayer integrated circuit assembly, an insulating layer is typicallydeposited onto the metalized vias or trenches so as to electricallyisolated the metalized vias or trenches from additional circuit layersthat will be formed in a stacked configuration above the vias ortrenches. In particular, the insulating layer typically comprises anoxide material such as silicon dioxide wherein the oxide electricallyisolates devices formed on adjacent circuit layers. Disadvantageously,however, the oxide layer will lose its insulating properties when copperor other conductive material diffuses from the underlying adjacent layerinto the oxide layer. In particular, metal that migrates into aninsulating oxide layer can effectively short out the deviceselectrically isolated by the layer.

To address this problem, a non-conductive barrier layer is generallyinterposed between the conductive layer and the adjacent insulatinglayer wherein the barrier layer inhibits metal from diffusing into theinsulating layer. In particular, a non-conductive barrier layertypically comprises a nitride film and is preferably positioned betweena top surface of a copper wiring layer and a bottom surface of anadjacent oxide layer so as to inhibit copper from migrating upwardlyinto the oxide layer. Furthermore, the nitride film can be depositedonto the copper surface by using well known deposition techniques suchas evaporation, sputtering, chemical vapor deposition, or plasmaenhanced chemical vapor deposition (PECVD).

However, one disadvantage of the standard nitride PECVD process is thatthe nitride film is known to react with a top surface of the copperlayer during the deposition process and will consequently alter theelectrical properties of the copper. In particular, the copper andnitride reaction is shown to substantially increase the copper lineresistance, which in turn will delay signal transmission betweendevices. Slow signal transmission is not favored in most semiconductordevices, particularly in high speed, high density integrated circuits.Furthermore, high speed integrated circuits generally require conductorswith low electrical resistance so as to facilitate current flow andsignal transmission. Therefore, a reduction in copper line resistance isnot only desirable but necessary in light of the constant demand forintegrated circuits with higher speed and increased device density.

Hence, from the foregoing, it will be appreciated that there is a needfor a process of depositing a non-conductive barrier layer so that anyincrease in the electrical resistance of the underlying conductivewiring or contact is reduced. To this end, there is a particular needfor a process of depositing a non-conductive barrier layer wherein thebarrier layer will not unfavorably increase the copper line resistance.

SUMMARY OF THE INVENTION

The aforementioned needs are satisfied by the method of forming aconductive interconnect integrated circuit of the present invention. Inone aspect, the present invention comprises a method of depositing alayer of non-conductive barrier film onto a layer of conductive materialwherein the deposition process does not affect the electrical resistanceof the metal, so that the resistance of the conductive material remainssubstantially the same before and after the deposition of thenon-conductive barrier layer.

In one embodiment, the method comprises depositing a silicon nitridenon-conductive barrier layer onto a copper surface is provided whereinthe method includes a low temperature plasma enhanced chemical vapordeposition process (PECVD) wherein the PECVD process temperature rangeis held between 150 C.-300 C. In particular, the low temperature rangeas disclosed in the present invention is shown to inhibit a reactionbetween the silicon nitride and copper that typically occurs during thestandard high temperature (400° C.) silicon nitride PECVD process. Suchreaction between the silicon nitride and copper is generally not favoredas it results in the formation of silicide in the copper, which in turnwill unfavorably increase the line resistance of the copper.

Furthermore, the undesired silicide formation in copper is also known tooccur in a reaction between the silane gas used as part of the PECVDprocess and the exposed copper surface when the PECVD process isconducted in a high temperature environment as taught by prior art. Incontrast, the process parameter as disclosed by the preferred embodimentis shown to inhibit this particular reaction between the silane gas andcopper so as to further inhibit the formation of silicide in copper.Alternatively, a layer of amorphous silicon carbide is also shown to bean effective non-conductive barrier layer that does not unfavorablyincrease the resistance of the copper. Preferably, the amorphous siliconcarbide is deposited onto the copper surface using a similar PECVDprocess with a process temperature of approximately 400 C.

From the foregoing, it will be appreciated that the aspects of thepresent invention provide a method of depositing a non-conductivebarrier layer onto a metal surface without increasing the resistance ofthe metal. In particular, the method provides a novel low temperatureplasma enhanced chemical vapor deposition (PECVD) process wherein thelow temperature processing environment is shown to inhibit the formationof silicide in the copper, thereby avoiding the undesired increase incopper line resistance that will otherwise result from using known PECVDprocess parameters. These and other objects and advantages of thepresent invention will become more apparent from the followingdescription taken in conjunction with the following drawings.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is a flow diagram illustrating a process for forming a conductivelayer into an opening on a substrate assembly, depositing a layer ofnon-conductive barrier layer on the conductive layer, and subsequentlyforming an insulating layer on the non-conductive barrier layer, inaccordance with a preferred embodiment of the present invention;

FIG. 2 is a partial elevational cross-section of a partially fabricatedintegrated circuit or substrate assembly, showing a conventionalinterlevel dielectric and a contact via therethrough, exposing aconductive circuit element beneath the via;

FIG. 3 is a partial elevational cross-section of the substrate assemblyof FIG. 2 illustrating a layer of conductive barrier material that isdeposited into the via defined by the opening;

FIGS. 4A is a partial elevational cross-section of the substrateassembly of FIG. 3 illustrating a layer of copper that has beendeposited onto the conductive barrier layer;

FIG. 4B is a partial elevational cross-section of the substrate assemblyof FIG. 3 illustrating a layer of copper that has been deposited ontothe conductive barrier layer and removed from the open areas;

FIG. 5 is a partial elevational cross-section of the substrate assemblyof FIG. 4 illustrating a layer of non-conductive barrier layer that isdeposited onto the copper layer;

FIG. 6 is a partial elevational cross-section of the substrate assemblyof FIG. 5 illustrating a layer of isolation material that is depositedonto the non-conductive barrier layer;

FIG. 7 is a partial elevational cross-section of a partially fabricatedintegrated circuit or substrate assembly, showing a conventionalinterlevel dielectric and a trench therethrough, wherein the trench ismetalized, a layer of non-conductive barrier material is interposedbetween the metal and a top layer of isolation material; and

FIG. 8 is a bar graph illustrating a comparison of the copper lineresistance of substrate assemblies that are processed using the standardhigh temperature deposition process versus substrates processed in a lowtemperature process environment as disclosed in the preferredembodiment.

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENT

Reference will now be made to the drawings wherein like numerals referto like parts throughout. As will be described herein below, the processof the preferred embodiment provides a method of depositing anon-conductive barrier layer onto a copper surface wherein the barrierlayer comprises a nitride film.

FIG. 1 schematically illustrates a process flow 100 of the preferredembodiment of forming a non-conductive barrier film between a topsurface of a conductive layer and a bottom surface of an insulatinglayer. As shown in FIG. 1, the process begins with a first step 102comprising the formation of an opening through an insulating layer. Aswill be shown in greater detail below, the openings generally extenddownwardly from a top surface of the insulating layer so as to eitherexpose an underlying conductive surface for electrical contact or so asto extend into the insulating layer to thereby define a trench adaptedto receive a conductive trace. Furthermore, the openings are typicallyformed on the insulating layer by a well known masking and etchingprocess and will be subsequently filled with a conductive material so asto form electrical contacts in a manner to be described in greaterdetail below.

As FIG. 1 further illustrates, following the formation of the opening, asecond step 104 comprises lining the opening with a conductive barrierlayer using a method known in the art. As will be shown in greaterdetail below, in the illustrated embodiment, the conductive barrierlayer comprises a thin layer of metal nitride deposited along the wallsof the opening so that it conforms to the contours of the opening. Themetal nitride layer confines the deposited metal to the opening whilestill allowing the deposited metal to maintain electrical contact withany underlying device that is exposed by the opening.

As is also shown in FIG. 1, subsequent to conductive barrier deposition,a third step 106 of the preferred embodiment comprises the metalizationprocess wherein a layer of conductive material such as copper isdeposited into the opening. Preferably, the copper is electroplated ontothe metal nitride liner and fills the entire opening. After metalizingthe opening, copper is removed from the non-recessed areas. Preferably,the copper is removed by chemical mechanical polishing. After the copperremoval from the non-recessed areas, a non-conductive barrier layer ispreferably deposited onto the metalized surface in a fourth step 107 asshown in FIG. 1. The non-conductive barrier layer effectively preventsmetal from diffusing upwardly into a subsequently deposited, adjacentinsulating layer. Preferably, the non-conductive barrier layer comprisesa nitride film, such as silicon nitride, and is deposited onto the metalsurface using a deposition process such as plasma enhanced chemicalvapor deposition (PECVD).

As will be described in greater detail below, the standard PECVD processfor nitride deposition is generally run at a temperature ofapproximately 400 C. At such elevated temperature, a reaction is knownto occur between the nitride film and a top surface of the copperwherein the reaction alters the electrical properties of the copper soas to substantially increase the copper line resistance. In particular,the high-temperature reaction between silicon nitride and copper inducesthe formation of silicide in the copper. Furthermore, in a hightemperature processing environment, the silane gas from the PECVDprocess is also known to react with the copper surface and inducessimilar formations of silicides in the copper. However, copper dopedwith suicides has a higher electrical resistance than that of purecopper. Moreover, copper line resistance is an important electricalproperty as it directly affects the speed of signal transmission. As itcan appreciated, conductors with high resistance are not favored in mostsemiconductive devices as high conductor resistance delays signaltransmission, which in turn slows the speed of the circuit.

As will be described in greater detail below, the present inventionprovides a novel method of eliminating the undesired increase in copperline resistance that typically results from silicon nitride depositionprocess using known PECVD process parameters. In particular, thepreferred method provides a nitride deposition process wherein the newprocess parameters comprise a generally lower temperature range so as toinhibit the silane gas and nitride film from reacting with theunderlying copper surface. As will be described in greater detail below,the copper line resistance remains substantially unchanged after nitridedeposition when the process is conducted in a low temperature PECVDenvironment as disclosed by the preferred embodiment. In contrast toknown nitride deposition methods that typically take place in arelatively high temperature chamber, the present method provides a lowertemperature process environment so as to prevent the formation ofsilicide in the copper and therefore reduce the adverse increase in lineresistance which could otherwise result if the traditionally known PECVDprocess parameters are used.

Preferably, as shown in a fifth step 109 of FIG. 1, the copper contactor wiring having a film of low temperature nitride deposited on its topsurface is subsequently annealed so as to ensure that the copper lineresistance remains substantially constant. Following annealing, a layerof insulating material is then deposited on a top surface of the nitridefilm in a sixth step 110 so as to isolate the underlying copper contactor wiring from devices to be formed on subsequent layers. As will bedescribed in greater detail below, the nitride film inhibits theunderlying copper from diffusing upwardly into the insulating layer soas to prevent electrical shorting between devices isolated by theinsulating layer.

The process will now be described in connection with a particularconfiguration of an integrated circuit. It will be appreciated that theprocess of the preferred embodiment can be implemented on any of anumber of circuit configurations without departing from the spirit ofthe present invention and the embodiments described herein are simplyillustrative of one implementation of the process.

FIG. 2 illustrates a partially fabricated integrated circuit orsubstrate assembly 112 wherein the structure is formed above a substrate111, which may comprise a single crystal wafer or other semiconductivelayer in which active or operable portions of the electrical devices areformed. In particular, the substrate assembly 112 of the illustratedembodiment represents, for example, an integrated circuit such as adynamic random access member (DRAM) circuit. As FIG. 2 furtherillustrates, a conductive layer 114 is formed above the substrate 111 ina manner well known in the art. Preferably, the conductive layer 114comprises copper or aluminum, although it can be appreciated that thereare other suitable conductive materials, depending on the function anddesired conductivity of the circuit element. In the illustratedembodiment, the conductive layer 114 forms a conductive runner or wiringlayer which comprises numerous contact landing pads for electricalinterconnection. A buffer layer 116, such as a non-conductive barrierlayer or anti-reflective layer from the previous processing, may bepresent as well. Preferably, the buffer layer 116 is approximately0.03-0.10 microns thick.

FIG. 2 further illustrates that an interlevel dielectric layer (ILD) 120is formed on a top surface 122 of the buffer layer 116. In oneembodiment, the ILD 120 can comprise a layer of borophosphosilicate(BPSG) and has a thickness adequate to electrically insulate underlyingconductors from overlying conductors, which depends upon circuit designand operational parameters. In particular, the ILD 120 of the preferredembodiment is between 0.40-0.60 microns thick and is deposited on thebuffer layer 116 using well known deposition techniques, such aschemical vapor deposition.

As it is further shown in FIG. 2, a contact via or hole 124 is etchedthroughout the ILD 120 to expose an underlying conductive circuitelement 126 on the conductive layer 114. Although FIG. 2 illustrates ametalization process for contact vias, it can be appreciated that thesame process can be applied to metalizing other integrated circuitfeatures, such as trenches. In the illustrated embodiment, the via 124is narrow due to circuit design constraints. In particular, the via 124preferably has a width of less than about 0.25 microns, resulting inaspect ratios greater than about 2.0. The via 124 is preferably definedby conventional photolithographic techniques and anisotropic etching soas to produce substantially vertical via sidewalls 130. The via 124 isformed so that electrical contact can be established with the underlyingcircuit element 126 that is exposed by the via 124. As FIG. 2 furthershows, the circuit element 126 exposed by the etched via 124 comprises acontact landing pad 128 of an underlying conductive runner or wiringlayer 114.

With reference to FIG. 3, a conductive barrier layer 132 such as a metalnitride liner is deposited over a top surface 134 the contact landingpad 128, the side walls 130 of the via 124, and a top surface 135 of theILD layer 120. Preferably, the conductive barrier layer 132 is depositedby physical vapor deposition (PVD) and is relatively thin, having athickness of approximately 0.01 to 0.1 microns. In the illustratedembodiment, the conductive barrier layer 132 comprises titanium nitride.The purpose of the metal nitride barrier layer is to prevent eutecticalloying between the metal to be filled into the vias 124 and the metalthat comprises the contact landing pad 128. Moreover, the barrier layer132 also inhibits diffusion of the metal deposited in the opening 124into the ILD layer 120 which could degrade the insulating properties ofthe ILD layer 120.

In the preferred embodiment, as shown in FIGS. 4A, 4B a layer ofconductive material 140, such as copper, is subsequently deposited on atop surface 136 of the conductive barrier layer 132 in a well knownmanner so as to complete the formation of electrical contact over theconductive layer 114. Preferably, the layer of copper 140 overfills theentire opening 124 of the contact via 124 as illustrated in FIG. 4A.Preferably, the copper is electroplated onto the conductive barriersurface 136 using a well known copper plating solution such as coppersulfate. Following metalization, copper 140 and the conductive barrierlayer 132 are removed from the raised areas, defined by a top surface131 of the isolation layer 120. leaving copper 140 only in a recessedregion 138 as shown in FIG. 4B. As it can be appreciated, FIG. 4B ismerely schematic, as the contact formation may be planarized, leaving acontact plug to define wiring layers in the portions of the conductivebarrier layer 132 and copper filler 140 as shown in FIG. 4B.

With reference to FIG. 5, a non-conductive barrier layer 142 is formedon a top surface 144 of the conductive layer 140 so as to inhibit themetal 140 from diffusing upwardly into a subsequently deposited,adjacent insulating layer. It can be appreciated that metal diffusinginto the insulating layer will degrade the insulating properties andpossibly short out devices isolated by such layer. As such, anon-conductive barrier layer is typically interposed between theinsulating layer and its underlying conductive layer so as to preventthe underlying metal from migrating upwardly into the insulating layer.

Preferably, the non-conductive barrier layer 142 comprises a nitridefilm, such as silicon nitride, and is 300 Å (100-1000 Å) thick.Preferably, the non-conductive barrier layer is deposited using a knowndeposition process such as plasma enhanced chemical vapor deposition(PECVD). As described above, the standard PECVD nitride depositionprocess is generally run at an elevated temperature in the range of 400C. Disadvantageously, at an elevated temperature, a reaction is known tooccur between the silicon nitride film and a top surface of the copperwherein the reaction alters the electrical properties of the copper soas to substantially increase the copper line resistance. In particular,the high temperature reaction results in the formation of suicides inthe copper. Furthermore, a high temperature PECVD processing environmentalso induces the silane gas used in the deposition process to react withthe copper surface and thereby also leads to the formation of silicidein the copper. However, copper doped with an impurity such as silicidetypically exhibits a higher resistance than that of pure copper.

In the preferred embodiment, the PECVD process parameters are designedto inhibit the formation of silicide on the copper surface so as toprevent the adverse increase in line resistance that typically resultsfrom using the standard PECVD process parameters known in the art. Inparticular, the preferred process operating temperature is lowered so asto inhibit silicon nitride or silane gas from reacting with copperwherein the reaction is known to contribute to silicide formation. Inone embodiment, the preferred PECVD process parameters designed for lowtemperature nitride deposition are as follows:

Deposition Temperature: 150-300 C.

Pressure: 3.0-6.5 torr

RF Power: 100-750 W

Space: 400-600 mils

SiH₄ flow: 20-15 sccm

NH₃ flow: 20-200 sccm

N₂ flow: 0-3500 sccm

He flow: 0-2000 sccm

In contrast to the standard PECVD process, the preferred embodimentdiscloses a process that operates at a substantially lower temperature,preferably between 150 C.-300 C. The lower temperature effectivelyinhibits the formation of silicide that typically occurs in a hightemperature process environment, as the silicide results from reactionsbetween the copper surface and the silicon nitride film or silane gasused as part of the PECVD process. Alternatively, instead of usingsilicon nitride, a layer of amorphous silicon carbide can also be usedas the non-conductive barrier film. Similar to the deposition of siliconnitride, the layer of amorphous silicon carbide can be formed on the topsurface 144 of the conductive layer 140 using a similar PECVD process,with a process temperature set at approximately 400 C.

In another embodiment, an annealing process follows the non-conductivemetal deposition process so as to ensure that the electrical resistanceof the underlying copper stays constant throughout the remainingprocessing steps. In this embodiment, the annealing process comprisesheating the copper to a temperature of 100-300 C. for 0.1 to 10 minutes.

As is generally shown in FIG. 6, subsequent to the deposition of thenon-conductive barrier film and annealing of copper, a layer ofinsulating material 146 is deposited on a first surface 150 of thebarrier film 142. Preferably, the insulating layer 146 comprises acommonly known oxide such as silicon oxide and is deposited using awell-known deposition technique. The insulating layer 146 is preferably0.5 to 2.0 microns thick and electrically isolates the underlyingconductive layer 140 from subsequently formed electrical devices.Furthermore, additional conductive and insulating layers can besequentially deposited onto the insulating layer 146 so as to completethe formation of a typical multilayer circuit.

In another embodiment as illustrated in FIG. 7, the low temperaturedeposition process of the present invention can also be used fordepositing a nitride film on a top surface of a metalized trench. As isshown in FIG. 7, a trench 152 is formed in an isolation layer 154 of asubstrate assembly 156 having a substrate 151. As FIG. 7 further shows,the trench 152 is formed in the isolation layer 154 and extendsdownwardly from a top surface 151 of the isolation layer 154 to anintermediate region 158 wherein an antireflective layer 159 and aconductive layer 155 underneath the isolation layer 154 remainunexposed. Furthermore, a conductive barrier layer 154 such as atitanium nitride film is deposited along the top surface 151 of theisolation layer 154 and along an inner surface 157 defined by the trench152. Furthermore, the electroplating process deposits a layer ofconductive material 162 such as copper onto the top surface 160 of theconductive barrier layer 154, followed by removal of copper from thenon-recessed areas, and finally by the deposition of a layer ofnon-conductive barrier 164 such as silicon nitride.

Preferably, the silicon nitride layer is deposited using a lowtemperature PECVD process as described above. As previously discussed,the low temperature silicon nitride film is interposed between thecopper 162 and a subsequently deposited, adjacent insulating layer 166as shown in FIG. 7. In particular, the silicon nitride film of thepreferred embodiment not only prevents copper from diffusing into theinsulating layer 166, but also will not react with the copper so as toform undesired silicide in the copper. As described in detail above, thelow temperature PECVD process inhibits the reaction between the copperand silicon nitride so as to not compromise the copper purity andundesirably increase its line resistance.

Furthermore, FIG. 8 illustrates the electrical resistance of samplecircuits processed according to the PECVD parameters as disclosed in thepreferred embodiment as well as sample circuits that underwent thetraditional high temperature nitride PECVD process. The resistance ispreferably measured from a test circuit pattern commonly known as aserpent pattern formed on each sample circuit. As FIG. 8 indicates,there is a substantial reduction in resistance when circuits areprocessed in a low temperature environment as suggested by the preferredembodiment. In particular, as is shown in FIG. 8, line resistance 200 ofcircuits processed using the preferred embodiment results in anapproximately 45 percent reduction in line resistance 202 from thoseprocessed using known PECVD process parameters.

Moreover, as is shown in FIG. 8, circuits processed under the preferredPECVD parameters do not significantly change in resistance before andafter nitride deposition, whereas circuits processed under thetraditional method experience a roughly 45 percent gain in resistancefollowing nitride deposition. Furthermore, it is also shown in FIG. 8that the line resistance of circuits processed using the preferredembodiment 208 remains virtually unchanged even after an annealingprocess that occurs at a relatively higher temperature of 400 C.

Hence, the disclosed embodiment provides a method to deposit anon-conductive barrier layer such as silicon nitride onto a coppersurface wherein the barrier layer is inhibited from reacting with thecopper and consequently does not significantly alter the electricalproperties of the conducting material. In particular, the nitride filmis deposited using a PECVD process with process parameters thatsignificantly deviate from the standard process. Specifically, theprocess temperature is substantially lowered so as to inhibit theformation of silicide that typically results from the standard PECVDsilicon nitride deposition process.

Hence, the process can be used to form integrated circuits or substrateassemblies having isolation layers, such as ILD layers with openingsformed therein that receive conductive material such as copper.Moreover, a non-conductive barrier layer deposited on the copper layercan be used to prevent upward diffusion of copper into a subsequentlydeposited, insulating layer. Advantageously, the preferrednon-conductive barrier layer deposition process inhibits the formationof silicide, an impurity in copper that typically results from thedeposition process and is known to substantially increase the resistanceof the copper. Therefore, the preferred deposition process provides alayer of non-conductive barrier that effectively prevents copper frommigrating upwardly into subsequent insulating layers and yet does notresult in unfavorable increases in copper line resistance.

Although the foregoing description of the preferred embodiment of thepresent invention has shown, described and pointed out the fundamentalnovel features of the invention, it will be understood that variousomissions, substitutions, and changes in the form of the detail of theapparatus as illustrated as well as the uses thereof, may be made bythose skilled in the art, without departing from the spirit of theinvention. Consequently, the scope of the present invention should notbe limited to the foregoing discussions, but should be defined by theappended claims.

What is claimed is:
 1. A method of maintaining the electrical resistanceof a conductive material in an integrated circuit at substantially thesame level before and after depositing a non-conductive barrier layer onthe conductive material, comprising: positioning an isolation regionadjacent a semiconductor substrate; forming an opening on the isolationregion; depositing a layer of conductive material into the opening;depositing a non-conductive barrier layer onto the layer of conductivematerial using a chemical vapor deposition process in a manner such thatthe non-conductive barrier layer inhibits diffusion of the conductivematerial into the isolation region, wherein the chemical vapordeposition process comprises a process temperature of between about150-300° C., and input gas flow rates, pressure, and power that arepreselected to inhibit formation of suicide in the conductive material,wherein after deposition of the non-conductive layer, the conductivematerial has a first resistance, wherein the first resistance is lowerthan the resistance of an equivalent conductive material having a layerof equivalent non-conductive barrier layer deposited thereon underequivalent deposition process conditions at a process temperature ofabout 400° C.; and subsequent to said depositing said non-conductivebarrier layer, annealing the conductive material in a manner so as tomaintain the first electrical resistance of the conductive materialthroughout subsequent processes.
 2. The deposition process of claim 1comprises a plasma enhanced chemical vapor deposition (PECVD).
 3. Themethod of claim 1, wherein after deposition of the non-conductive layer,the first resistance of the conductive material is about 45% lower thanthe resistance of an equivalent conductive material having a layer ofequivalent non-conductive barrier layer deposited thereon underequivalent deposition process conditions at a process temperature ofabout 400° C.
 4. The method of claim 1, wherein the step of depositing anon-conductive barrier layer comprises depositing a silicon nitridelayer.
 5. The method of claim 4, wherein the step of depositing asilicon nitride barrier layer comprises using plasma enhanced chemicalvapor deposition at a process temperature of between approximately 150C.-300 C.
 6. The method of claim 5, wherein the silicon nitride barrierlayer is formed by plasma enhanced chemical vapor deposition occurringin a reaction chamber at a pressure of approximately 3.0-6.5 torr, withan RF power of approximately 100-750 Watts, at a Space of approximately400-600 mils, with a SiH₄ flow of approximately 20-150 sccm, with a NH₃flow of approximately 20-200 sccm, with a N₂ flow of approximately0-3500 sccm, and with an He flow of approximately 0-2000 sccm.
 7. Themethod of claim 1, wherein the step of depositing a non-conductivebarrier layer comprises depositing an amorphous silicon carbide layer.8. The method of claim 1, wherein the step of depositing a conductivelayer comprises depositing a copper layer.
 9. The method of claim 8,wherein the step of forming a copper layer comprises forming a coppercontact.
 10. The method of claim 8, wherein the step of forming a copperlayer comprises forming a copper wiring.
 11. The method of claim 1,further comprising depositing a layer of isolation material on a topsurface of the non-conductive barrier layer.
 12. The method of claim 11,wherein the step of depositing a layer of isolation material comprisesdepositing a layer of silicon dioxide.